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| Study on the amorphous phase structure and thermal denaturation of electronic material polytetrafluoroethylene |
| Li Boxuan1, Chang Meiling2, Zhou Zixuan2, Wu Yuliang2, Yu Hongwei2, Xu Yuanyuan2 |
| 1. Department of Electronic Information and Electrical Engineering, Dalian University of Technology, Dalian 116081;
2. School of Chemical Engineering Shijiazhuang College, Shijiazhuang 050035 |
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Abstract In order to study the changes in the amorphous phase structure of polytetrafluoroethylene at different temperatures, mid infrared (MIR) spectroscopy and variable temperature MIR spectroscopy techniques were used, respectively. The experiment found that the infrared absorption modes of the amorphous phase structure of polytetrafluoroethylene at a temperature of 303 K mainly included: ν-A-amorphous phase (854.33 cm-1), ν-B-1-amorphous phase, (781.57 cm-1), ν-B-2-amorphous phase (773.03 cm-1) and ν-C-amorphous phase (740.67 cm-1). In the temperature range of 303 K to 523 K, as the measurement temperature increased, the infrared absorption frequency and intensity of the main functional groups corresponding to the amorphous phase structure of polytetrafluoroethylene had certain change, and its thermal stability further decreased. Research has shown that the above methods can be used to study the amorphous phase structure and thermal denaturation of polytetrafluoroethylene, providing a reference basis for the study of amorphous phases in other electronic materials.
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